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 Bulletin I2183 11/04
SAFEIR Series 40TPS16PBF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
VT
< 1.45V @ 40A
ITSM = 500A VRRM = 1600V
Description/ Features
The 40TPS16PBF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
Major Ratings and Characteristics Characteristics
IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM VT dv/dt di/dt TJ @ 40 A, TJ = 25C 55 1600 500 1.45 1000 100 - 40 to 125 A V A V V/s A/s C
Package Outline Units
A
Values
35
TO-247AC
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1
40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
Voltage Ratings
VRRM/ V DRM, max. repetitive Part Number
40TPS16PBF
VRSM , maximum non repetitive peak reverse voltage V
1700
IRRM/ I DRM 125C mA
10
peak and off-state voltage V
1600
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current 55 IT(RMS) Max. Continuous RMS On-state Current As AC switch ITSM
2
40TPS16 Units
35 A
Conditions
@ TC = 79 C, 180 conduction half sine wave
Max. Peak One Cycle Non-Repetitive Surge Current
500 600 1250 1760
A
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied
Initial TJ = TJ max.
It
Max. I t for Fusing
2
As
2
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied
I t
2
Max. I t for Fusing
2
12500 1.02
A s V
2
t = 0.1 to 10ms, no voltage reapplied TJ = 125C
VT(TO)1 Low Level Value of Threshold Voltage VT(TO)2 High Level Value of Threshold Voltage rt1 rt2 VTM di/dt IH IL IRRM / IDRM dv/dt Low Level Value of On-state Slope Resistance High Level Value of On-state Slope Resistance Max. Peak On-state Voltage Max. Rate of Rise of Turned-on Current Max. Holding Current Max. Latching Current Max. Reverse and Direct Leakage Current Max. Rate of Rise of Off-state Voltage
1.23
9.74
m
7.50
1.85 100 150 300 0.5 10 1000
V A/s mA
@ 110A, TJ = 25C TJ = 25C
TJ = 25C TJ = 125C V/s
VR = rated VRRM/ VDRM
TJ = TJ max., linear to 80% V DRM , R g-k = open
2
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40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
Triggering
Parameters
PGM Max. peak Gate Power PG(AV) Max. average Gate Power IGM Max. peak Gate Current
40TPS16 Units
10 2.5 2.5 10 4.0 2.5 1.7 A V TJ = - 40C TJ = 25C TJ = 125C mA TJ = - 40C TJ = 25C TJ = 125C W
Conditions
- VGM Max. peak negative Gate Voltage VGT Max. required DC Gate Voltage to trigger
Anode supply = 6V resistive load
IGT
Max. required DC Gate Current to trigger
270 150 80 40
TJ = 25C, for 40TPS08A V mA TJ = 125C, V DRM = rated value
VGD IGD
Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger
0.25 6
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
40TPS16 Units
- 40 to 125 - 40 to 125 0.6 C/W DC operation C
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Max. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Min. Max. Case Style Marking Device
40
0.2
Mounting surface, smooth and greased
6 (0.21) 6 (5) 12 (10)
g (oz.) Kg-cm (lbf-in)
TO-247AC 40TPS16
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40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
Maximum Allowable Case Temperature (C)
Maximum Allowable Case T emperature (C)
130 120 110
40T .. S PS eries R thJC (DC) = 0.6 C/ W
130 120 110
40T .. S PS eries RthJC (DC) = 0.6 C/ W
Conduction Angle
Conduction Period
100 90 80 70
30
100 90 80 70 0 10 20 30 40 50 60 Average On-state Current (A) 30 60
60 90 120 180
90 120 180 DC
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Avera g e On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
Maximum Averag e On-state Power Loss (W) 80 70 60 50 DC 180 120 90 60 30
60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 Avera ge On-sta te Current (A) 180 120 90 60 30
RMS Limit
40 RMSLimit 30 20 10 0 40T .. S PS eries TJ = 125C 0 10 20 30 40 50 60
Conduction Angle
Conduction Period
40T .. S PS eries TJ= 125C
Avera ge On-sta te Current (A)
Fig. 3 - On-state Power Loss Characteristics
550 500 450 400 350 300 250
Fig. 4 - On-state Power Loss Characteristics
600 550 500 450 400 350 300 40T .. S PS eries
Peak Half S Wave On-state Current (A) ine
40T .. S PS eries 1 10 100
Peak Half S Wa ve On-state Current (A) ine
At Any R ted Load Condition And With a Rated V RRM Ap plied F ollowing Surge. Initia l TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s
Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage R eap p lied Rated V eap p lied RRM R
250 0.01
0.1 Pulse T in Duration (s) ra
1
Number Of Equal Amplitude Half Cycle Current Puls (N) es
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
100 Instanta neous On-s te Current (A) ta
10
TJ= 25C TJ= 125C
40T .. S PS eries 1 0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
100 Instantaneous Gate Voltage (V)
10
Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)R ommended load line for ec <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s
(1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms
(a)
(b)
T = -40 C J T = 25 C J T = 125 C J
1 VGD IGD 0.1 0.001 0.01
(4) (3)
(2) (1)
40T .. PS 0.1 1
Frequenc y Limited by PG(AV) 10 100 1000
Instantaneous Gate Current (A)
Fig. 8 - GateCharacteristics
T ransient T hermal Impeda nc e Z thJC (C/W) 1
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
S teady S tate Value (DC Opera tion)
S ingle Pulse 40T .. S PS eries 0.01 0.0001
0.001
0.01 S quare Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance ZthJC Characteristics
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5
40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
Outline Table
15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 ( 0 .22 5) 5.30 ( 0.208) 20 .30 ( 0 .800 ) 19 .70 ( 0 .775 ) 5.50 ( 0.217) 4. 50 ( 0 .17 7) 1 2 3 (2 PLCS.) 3. 65 (0 .14 4) 3. 55 (0 .13 9)
DIA.
5. 30 ( 0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098)
1.5 ( 0.059)
14. 80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0 .17 0) 3. 70 (0 .14 5)
1. 40 (0 .05 6)
2. 20 ( 0 .08 7) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3)
2. 40 (0 .09 5) M AX.
2 (A)
1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 ( 0 .427 )
Dimensions in millimeters and inches
1 (K) (G) 3
Marking Information
EXAMPLE: THIS IS A 40TPS16 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
40TPS16
P035H
56
57
DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H
6
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40TPS16PBF SAFEIR Series
Bulletin I2183 11/04
Ordering Information Table
Device Code
40
1 1 2 3 4 5 6 -
T
2
P
3
S
4
16 PbF
5 6
Current Rating (40 = 40A) Circuit Configuration: T = Thyristor Package: T = TO-247 Type of Silicon: S = Standard Recovery Rectifier Voltage Rating (16 = 1600V) none = Standard Production PbF = Lead-Free
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/04
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